목차
1. amorphous
2. poly crystalline
3. crystalline
4. lattice
5. unit cell
6. ingot
7. carrier
8. electron
9. hole
10. conduction band
11. valence band
12. band gab
13. effctive mass
14. intrinsic semiconductor
15. extrinsic semiconductor
16. dopant
17. donor
18. acceptor
19. N-type material
20. P-type material
21. N+(or P+) material
22. majority carrier
23. minority carrier
24. density of state
25. fermi function
26. Fermi energy (or level)
27. Nondegenerate semiconductor
28. Degenerate semiconductor
29. charge netrality
30. ionisation of dopant sites
31. extrinsic temperature region
32. Intrinsic temperature region
33. freeze-out
34. drift
35. scattering
36.drift velocity
37. thermal motion
38. drift current
39. current density
40. mobility
41. resistivity
42. conductivity
43. band bending
44. diffusion
45. diffusion current
46. diffsion constant
47. recombination
48. generation
49. photogeneration
50. direct thermal R-G
51. indirect thermal R-G
52. R-G center
53. low level injection
54. equilibrium
55. perturbation
56. steady state
57. quasi steady state
58. minority carrier lifetime
59.minoritycarrier diffusion length
60. quasi-fermi level
2. poly crystalline
3. crystalline
4. lattice
5. unit cell
6. ingot
7. carrier
8. electron
9. hole
10. conduction band
11. valence band
12. band gab
13. effctive mass
14. intrinsic semiconductor
15. extrinsic semiconductor
16. dopant
17. donor
18. acceptor
19. N-type material
20. P-type material
21. N+(or P+) material
22. majority carrier
23. minority carrier
24. density of state
25. fermi function
26. Fermi energy (or level)
27. Nondegenerate semiconductor
28. Degenerate semiconductor
29. charge netrality
30. ionisation of dopant sites
31. extrinsic temperature region
32. Intrinsic temperature region
33. freeze-out
34. drift
35. scattering
36.drift velocity
37. thermal motion
38. drift current
39. current density
40. mobility
41. resistivity
42. conductivity
43. band bending
44. diffusion
45. diffusion current
46. diffsion constant
47. recombination
48. generation
49. photogeneration
50. direct thermal R-G
51. indirect thermal R-G
52. R-G center
53. low level injection
54. equilibrium
55. perturbation
56. steady state
57. quasi steady state
58. minority carrier lifetime
59.minoritycarrier diffusion length
60. quasi-fermi level