목차
1. 실험목적
2. 실험과정
3. 결과분석
4. 결론
5. 참고문헌
2. 실험과정
3. 결과분석
4. 결론
5. 참고문헌
본문내용
Purpose of the Experiment
Understanding the principle and characteristics of the MOS Capacitor
C-V, I-V analysis in accordance with the thickness of the Al2O3 insulator
Insulator thickness (6nm, 12nm, 18nm)
Experimental Background
MOS Capacitor
MOS Capacitor structure
MOS Capacitor principle
<중 략>
1. I-V Results Analysis
Negative Voltage applied
Break down tendency
Current increase section
current at thickness 12nm > currents at thickness 6nm and 18nm
Guess cause of the error
(1) Breakdown voltage
(2) Skin effect : Depending humidity or the shape of the surface, there is a large variation
(3) No annealing process
(4) It is dependent on the surronding conditions such as humidity and surface internal temperature
Understanding the principle and characteristics of the MOS Capacitor
C-V, I-V analysis in accordance with the thickness of the Al2O3 insulator
Insulator thickness (6nm, 12nm, 18nm)
Experimental Background
MOS Capacitor
MOS Capacitor structure
MOS Capacitor principle
<중 략>
1. I-V Results Analysis
Negative Voltage applied
Break down tendency
Current increase section
current at thickness 12nm > currents at thickness 6nm and 18nm
Guess cause of the error
(1) Breakdown voltage
(2) Skin effect : Depending humidity or the shape of the surface, there is a large variation
(3) No annealing process
(4) It is dependent on the surronding conditions such as humidity and surface internal temperature
키워드
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