Growth of Single Crystal(bulk, thin film, nanowire)

소개글

Growth of Single Crystal(bulk, thin film, nanowire)에 대한 보고서 자료입니다.

목차

Single crystal?

Environment of crystal growth

Growth of single crystal bulk
-1. Bridgman Growth(BG)
2. Czochralski Growth(CG)
3 Float Zone(FZ)
4. Edge defined film fed growth(EFG)
5. Skull melting법
6. Verneuil법
7. LEC(Liquid Encapsulated Czochralski)
8. Hydrothremal method
9. VGF(Vertical Gradient Freeze)

2. Analysis method

Growth of single crystal thin film
-1. Hot Wall Epitaxy(HWE method)
2. CVD(Chemical vapor deposition)
3. Sputtering
4. Molecular beam epitaxy(MBE)

2. Analysis of method

Growth of single crystal nanowires
1. The growth of nanowire by a catalyst
2. Laser assisted catalytic growth(LCG)
3. self-catalytic VLS method
4. Nanowire synthesis in the solution.
5. Carbon nano tube template method
6. Porous template method
7. Chemical Vapor Deposition(CVD)
8. Vapor-Liquid-Soild(VLS) method
9. SLS method

2. Analysis of method

본문내용

nd single crystal and thin wire.
8. Chemical Vapor Deposition(CVD)
-CVD is the chemical reaction between gas and liquid as well as the method to make nanowire. It is composed of the gas phase material with the metallic material. So it grows with the wire shape..
9. Vapor-Liquid-Soild(VLS) method
-It needs the nanowire material that we have to grow and the catalyst which is eutectic alloy. It can grow in the low temperature by this catalyst. So we can find the catalyst mark at the end of the nanowire. The material is evaporated by laser and other methods, and the evaporated material react upon the catalyst near the eutectic point. It forms liquid eutectic alloy. This alloy(droplet shape) is getting super-saturated and began to nucleation. After that the irlidification and the growth proceed continually forward to th mairst nucleation. Finally it grows like a nanowire.
10. SLS method
Generally the metal which has low melting temperature(In, Sn, Bi) acts as a catalyst, and the material which should be composed is generated by decomposition of organic metal.
Analysis of method
1)TEM
-To see the nanowire surface, size,
2)X-ray diffraction(XRD)
-to reveal information about the crystallographic structure, chemical composition, and physical properties of materials
3)Micro-Raman Scattering experiment
-to analyze the optical character
4)X-ray photoelectron spectroscopy(XPS)
-to measure the elemental composition, empirical formula, chemical state and electronic state of the elements that exist within a material.
5)Scanning tunneling microscopy(STM)
-to see the surfaces at the atomic level
reference
1. Growth of Long Persistent SrAl2O4 : Eu2+, Dy3+, Phosphor crystals by the
Verneuil Method, 한국 결정학회 // Kyung-jy nam, Jong-keon Choi
2. 결정성장(전자컴퓨터공학연구총서 7), 아카데미아리서치 // 김철주 감수
3. 분자선 에피택시(전자컴퓨터공학연구총서 8), 아카데미아리서치 // 김철주 감수
4. 결정성장학, 다성출판사 // 김정남 외 8인 공역
5. Introduction to Microelectronic Fabrication, PRENTICE HALL // R. Jaeger
6. EFG 법에 의한 Sapphire Ribbon 단결정 성장/박신서· 류두형· 정재우· 최종건(J.K. Choi) · 오근호(K.K. Orr) · 손선기(S.K. Sohn) · 변영재(Y.J. Byeon) · 전형탁(H.T. Chun) 저
7. GaSb single-crystal growth by vertical gradient freeze /L. Reijnen, , R. Brunton and I.R. Grant
8. 축방향자기장 인가된 수직온도구배냉각법에서 반응용기에 따른 GaAs 단결정의 특성/김 은규 · 박용주 · 손맹호 · 최원철 · 민석기 저
9. 분광학적 방법을 이용한 LN 및 KLN 단결정의 조성분석/ 김태훈 · 유영문 · 노지현 저
10. 단결정 3C - SiC (Ⅲ) 박막의 성장 및 분석/서영훈 , 남기석
11. Hot Wall Epitaxy (HWE)법에 의한 ZnIn2S4 단결정 박막 성장과 가전자대 갈라짐에 대한 대한 광전류 연구/양동익 최용대 김진배
12. HWE법에 의한 CdS 단결정 박막의 성장/양동익 최용대 김진배
13. SnSe,BaF2 단결정 박막의 성장과 광학적 특성/이일훈 두하영
14. Au-Si을 촉매로 급속화학기상증착법으로 성장한 Si 나노선의 구조 및 광학적 특성 연 구/곽동욱(D.W. Kwak) · 이연환(Y.H. Lee) 저
15.SolutionLiquidSolid (SLS) Growth of Silicon Nanowires/Andrew T. Heitsch, Dayne D. Fanfair, Hsing-Yu Tuan† and Brian A. Korgel
16. SolutionLiquidSolid (SLS) Growth of Silicon Nanowires /Andrew T. Heitsch, Dayne D. Fanfair, Hsing-Yu Tuan, and Brian A. Korgel
17. Single Crystal Au Nanowires and their Field Emission Properties/Chih-Yen Chen, Li-Jen Chou*
18. POSTECH 용기중 교수님 강의안

키워드

단결정,   박막,   벌크,   나노와이어,   성장방법,   분석방법,   종류,   단결정 성장