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Growth of single crystal thin film
-1. Hot Wall Epitaxy(HWE method)
2. CVD(Chemical vapor deposition)
3. Sputtering
4. Molecular beam epitaxy(MBE)
2. Analysis of method
Growth of single crystal nanowires
1. The growth of nanowire by a catalyst
2. Laser assisted catalytic growth(LC
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Single crystal bulk
1.1 Theory
1.2 Method of growing single crystal 'KDP'
-\"Aqueous solution method\"
1.3 Result
1.4 Conclusion
2. Single crystal thin film
2.1 Theory
2.2 Method of growing single crystal 'ZnO Film'
-\"Sputtering\"
2.3 Result
2.4 Conclusion
3. Sing
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film-formation.hwp
[3] Lee H.Y, Principles of Thin Film Formation I: Nucleation and Growth, Georgia Institute of Technology, U.S.A,
[4] H.J. Yearian, Intensity of Diffraction of Electron by ZnO,PHYSICAL REVIEW, Vol. 48, 1935, p.631-639 1. Abstract
2. Introduction
3. Experimental design
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of laser CVD growth mechanism
Reference
1. S. Sivaram, Chemical Vapor Deposition, International Thomson publishing Inc., 1987
2. M. L. Hitchman, Chemical Vapor Deposition Principle and Application,
Academic Press, 1993
3. Donald L. Smith, Thin Film Deposition, McGraw Hill Inc., 1995
4. Milton
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of YBa2Cu3O7-δ Films and the Loss Tangent of Rutile(TiO2) Measured by the Two-tone Method, Chinese Jounal of Physics, vol. 42, 431~437 (2004)
[23] J. H. Lee et al., Accurate Measurements of the Intrinsic Surface Resistance and Complex Conductivity of Thin YBa2Cu3O7-δ and MgB2 Films by Using Single S
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of CIGS photovoltaic cell, which has been developed recently by KIER(Korea Institute of Energy Researsh) Solar Cell Research center.
Key word : low-priced, high-efficiency, thin film photovoltaic cell, conversion efficiency characteristics, CIGS solar cell, Cu, In, Ga, Se2 List of Figure
List
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