목차
1. What is the thin film?
2. What is the CVD?
3. Principle of the cvd
4. AdvantageS of the CVD
5. Classification of the CVD
6. Applications of the CVD
7. Prospects of the CVD
8. Atomic layer deposition
9. Conclusion
2. What is the CVD?
3. Principle of the cvd
4. AdvantageS of the CVD
5. Classification of the CVD
6. Applications of the CVD
7. Prospects of the CVD
8. Atomic layer deposition
9. Conclusion
본문내용
WHAT IS THIN FILM?
KIST Definition (1991)
- Thin Film : 기판층(substrate layer)에 형성된 수 m 이하의 두께를
갖는 것으로 독립적인 기능을 보유한 막.
ADVANTAGES OF THIN FILM
Complexibility and Accumulations
Easy processing
lm)
Easy Control of Thermal, Mechanical and Chemical Properties
Down the Cost of Production
High-Reliance
WHAT IS cvd?
Principle of cvd
High purity and quality deposition
Good economy and process control
A great variety of chemical compositions
High step coverage
Selective deposition
AdvantageS of CVD
Classification of CVD
Thermal(conventional) CVD
- Operating Temp. : 800 1200 ℃
- Mass Products
- High Purity Thin Film
- influenced by various factors
Metal-Organic CVD(MOCVD)
- Metal-Organic compound
- High reproducibility
- Low-Temperature
- Complex structure
Plasma Enhanced CVD(PECVD)
- Using a Plasma
- Low-Temperature
- High deposition rate
- Limited step coverage
Low Pressure CVD(LPCVD)
- Pressure : 0.5 ~ 1 Torr
- High step coverage
- High Uniformity
- Low deposition rate
KIST Definition (1991)
- Thin Film : 기판층(substrate layer)에 형성된 수 m 이하의 두께를
갖는 것으로 독립적인 기능을 보유한 막.
ADVANTAGES OF THIN FILM
Complexibility and Accumulations
Easy processing
lm)
Easy Control of Thermal, Mechanical and Chemical Properties
Down the Cost of Production
High-Reliance
WHAT IS cvd?
Principle of cvd
High purity and quality deposition
Good economy and process control
A great variety of chemical compositions
High step coverage
Selective deposition
AdvantageS of CVD
Classification of CVD
Thermal(conventional) CVD
- Operating Temp. : 800 1200 ℃
- Mass Products
- High Purity Thin Film
- influenced by various factors
Metal-Organic CVD(MOCVD)
- Metal-Organic compound
- High reproducibility
- Low-Temperature
- Complex structure
Plasma Enhanced CVD(PECVD)
- Using a Plasma
- Low-Temperature
- High deposition rate
- Limited step coverage
Low Pressure CVD(LPCVD)
- Pressure : 0.5 ~ 1 Torr
- High step coverage
- High Uniformity
- Low deposition rate
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